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MCR218-6G Dataheets PDF



Part Number MCR218-6G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Silicon Controlled Rectifiers
Datasheet MCR218-6G DatasheetMCR218-6G Datasheet (PDF)

MCR218-2G, MCR218-4G, MCR218-6G Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. Features • Glass-Passivated Junctions • Blocking Voltage to 400 Volts • TO-220 Construction − Low Thermal Resistance, High Heat Dissipation and Durability MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rat.

  MCR218-6G   MCR218-6G


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MCR218-2G, MCR218-4G, MCR218-6G Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. Features • Glass-Passivated Junctions • Blocking Voltage to 400 Volts • TO-220 Construction − Low Thermal Resistance, High Heat Dissipation and Durability MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (TJ = *40 to 125°C, Gate Open) MCR218−2G MCR218−4G MCR218−6G VDRM, VRRM 50 200 400 V On-State RMS Current (180° Conduction Angles; TC = 70°C) IT(RMS) 8.0 A Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) Circuit Fusing Considerations (t = 8.3 ms) ITSM I2t 100 A 26 A2s Forward Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 70°C) Forward Average Gate Power (t = 8.3 ms, TC .


MCR218-4G MCR218-6G MCR218-2


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