Document
MCR218-2G, MCR218-4G, MCR218-6G
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed.
Features
• Glass-Passivated Junctions • Blocking Voltage to 400 Volts • TO-220 Construction − Low Thermal Resistance, High Heat
Dissipation and Durability
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage (Note 1) (TJ = *40 to 125°C, Gate Open)
MCR218−2G
MCR218−4G
MCR218−6G
VDRM, VRRM
50 200 400
V
On-State RMS Current (180° Conduction Angles; TC = 70°C)
IT(RMS)
8.0
A
Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)
Circuit Fusing Considerations (t = 8.3 ms)
ITSM I2t
100 A 26 A2s
Forward Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 70°C)
Forward Average Gate Power (t = 8.3 ms, TC .