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2N3700

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SILICON NPN TRANSISTOR

SILICON NPN TRANSISTOR 2N3700 • High Voltage, Medium Power Silicon Planar NPN Transistor • Hermetic TO18 Metal Package ...


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2N3700

File Download Download 2N3700 Datasheet


Description
SILICON NPN TRANSISTOR 2N3700 High Voltage, Medium Power Silicon Planar NPN Transistor Hermetic TO18 Metal Package High Reliability Screening Options Available CECC and Space Quality Level Options ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 140V VCEO Collector – Emitter Voltage 80V VEBO Emitter – Base Voltage 7.0V IC Continuous Collector Current 1.0A PD Total Power Dissipation at TA = 25°C 0.5W Derate Above TA = 25°C 2.9mW/°C TC = 25°C 1.0W Derate Above TC = 25°C 5.7mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Min. Typ. Max. 350 175 Unit °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is be...




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