CONTROLLED RECTIFIERS. S2800D Datasheet

S2800D RECTIFIERS. Datasheet pdf. Equivalent

Part S2800D
Description SILICON CONTROLLED RECTIFIERS
Feature S2800 SERIES High-reliability discrete products and engineering services since 1977 SILICON CONTRO.
Manufacture Digitron Semiconductors
Datasheet
Download S2800D Datasheet

S2800D Datasheet
S2800 SERIES High-reliability discrete products and enginee S2800D Datasheet
isc Thyristors S2800D APPLICATIONS ·It is suitable to fit S2800D Datasheet
Recommendation Recommendation Datasheet S2800D Datasheet




S2800D
S2800 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Peak repetitive forward and reverse blocking voltage (1)
Symbol
Value
Unit
(TJ = 25 to 100°C, gate open)
S2800F
50
S2800A
S2800B
VRRM, VDRM
100
200
Volts
S2800D
400
S2800M
600
S2800N
Peak non-repetitive reverse voltage and non-repetitive off state voltage(1)
800
(TJ = 25 to 100°C, gate open)
S2800F
75
S2800A
S2800B
VRSM, VDSM
125
250
Volts
S2800D
500
S2800M
700
S2800N
900
Forward on-state current RMS (all conduction angles) TC = 75°C
Peak forward surge current
(one cycle, sine wave, 60Hz, TC = 80°C)
Circuit fusing considerations
(t = 8.3ms)
IT(RMS)
ITSM
I2t
10 Amps
100 Amps
40 A2s
Forward peak gate power (t ≤ 10µs)
PGM
16 Watts
Forward average gate power
PG(AV)
0.5 Watts
Operating junction temperature range
TJ
-40 to +100
°C
Storage temperature range
Tstg
-40 to +150
°C
Note 1: VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied
concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices
are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
RѲJC
Maximum value
2
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Peak forward or reverse blocking current
(VAK = VDRM or VRRM, gate open)
TC = 25°C
TC = 100°C
Instantaneous on-state voltage
(ITM = 30A peak, pulse width ≤ 1ms, duty cycle ≤ 2%)
Gate trigger current (continuous dc)
(VD = 12V, RL = 30Ω)
Gate trigger current (continuous dc)
(VD = 12V, RL = 30Ω)
Symbol Min Typ Max Unit
IDRM - - 10 µA
- - 2 mA
VT - 1.7 2 Volts
IGT - 8 15 mA
VGT - 0.9 1.5 volts
Rev. 20130128



S2800D
S2800 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
Characteristic
Holding current
(VD = 12V, gate open, IT = 150mA)
Gate controlled turn-on time
(VD = rated VDRM, ITM = 2A, IGR = 80A)
Circuit commutate turn off time
(VD = VDRM, ITM = 2A, pulse width ≤ 50µs, dv/dt = 200V/µs, di/dt = 10A/µs,
TC = 75°C)
Critical rate of rise of off-state voltage
(VC = Rated VDRM, exponential rise, TC = 100°C)
MECHANICAL CHARACTERISTICS
Case TO-220AB
Marking
Alpha numeric
Pin out
See below
Symbol Min Typ Max Unit
IH - 10 20 mA
tgt
- 1.6 -
µs
tq
- 25 -
µs
Dv/dt
- 100 - V/µs
Rev. 20130128





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