MMBT9014C

MMBT9014 NPN Silicon Epitaxial Planar Transistors For switching and AF amplifier applications As complementary types the PNP transistors MMBT9015 is recommended. Absolute Maximum Ratings (Ta = 25℃) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj Ts Characteristics at Ta = 25℃ PARAMETER DC Current Gain at VCE = 5 V, IC = 1 mA MMBT9014B MMBT9014C MMBT9014D Collector Cutoff Current at VCB = 50 V Emitter Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 100 mA, IB = 5 mA Base Emitter Saturation Voltage at IC = 100 mA, IB = 5 mA Gain Bandwidth Product at VCE = 5 V, IC = 10 mA Output Capacitance at VCB = 10 V, f = 1 MHz Noise Figure at VCE = 5 V, IC...