MMBT9013

MMBT9013 NPN Silicon Epitaxial Planar Transistors For switching and amplifier applications As complementary types the PNP transistors MMBT9012 is recommended. Absolute Maximum Ratings (Ta = 25℃) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj Tstg 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package VALUE 40 30 5 500 200 150 - 55 to + 150 UNIT V V V mA mW ℃ ℃ Characteristics at Ta = 25℃ PARAMETER DC Current Gain at VCE = 1 V, IC = 50 mA Current Gain Group at VCE = 1 V, IC = 500 mA Collector Base Cutoff Current at VCB = 35 V Emitter Base Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 500 mA, IB = 5...