MMBT9013G

MMBT9013G / MMBT9013H NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012G and MMBT9012H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings (T a = 25 OC) Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCEO VEBO IC Ptot Tj TS Value 30 5 500 200 150 -55 to +150 Unit V V mA mW OC OC РАДИОТЕХ Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: [email protected] Веб: www.rct.ru ® MMBT9013G / MMBT9013H Characteristics at Tamb=25 OC Symbol Min. Typ. Max. DC Current Gain at VCE=1V, IC=100mA MMBT9013G hFE 100 - 250 MMBT9013H hFE 160 - 400 at VCE=1V, IC=500mA hFE 40 - - Collector Cutoff Current at VCB=31V Collector Emitter Breakdown Voltage ICBO - - 100 at IC=1mA Emitter Base Cutoff Current V(BR)CEO 30 - - at VEB=5.1V Collector Saturation Voltage IEBO...