MMBT2222
TRANSISTOR(NPN)
FEATURES Genernal Purpose Amplifier
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbo...
MMBT2222
TRANSISTOR(
NPN)
FEATURES Genernal Purpose Amplifier
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
75
VCEO Collector-Emitter Voltage
30
VEBO Emitter-Base Voltage
6
IC Collector Current
600
PC Collector Power Dissipation
250
RΘJA Thermal Resistance From Junction To Ambient
500
Tj Junction Temperature Tstg Storage Temperature
150 -55～+150
Unit V V V mA
mW ℃/W
℃ ℃
SOT–23
1. BASE 2. EMITTER 3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=10µA, IE=0
75
V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO IE=10µA, IC=0
6
V
Collector cut-off current
ICBO
VCB=60V, IE=0
10 nA
Collector cut-off current
ICEX
VCE=30V, VBE(off)=3V
10 nA
Emitter cut-off current
IEBO
VEB=3V, IC=0
0.1 µA
hFE(1)* V...
