MMBT2222/MMBT2222A
GENERAL PURPOSE NPN TRANSISTORS
FEATURES HIGH DC CURRENT GAIN EPITAXIAL PLANAR DIE CONSTRUCTION ...
MMBT2222/MMBT2222A
GENERAL PURPOSE
NPN TRANSISTORS
FEATURES HIGH DC CURRENT GAIN EPITAXIAL PLANAR DIE CONSTRUCTION COMPLEMENTARY
PNP YTPE AVAILABLE(MMBT2907A) PB FREE PRODUCT ARE AVAILABLE :98.5% SN ABOVE
MECHANICAL DATA CASE:SOT-23 TERMINALS:SOLDERABLE PER MIL-STD-202,
METHOD 208 APPROX. WEIGHT:0.008 GRAM Pb Free: MMBT2222/MMBT2222A
Halogen Free: MMBT2222-H/MMBT2222A-H
CASE:SOT-23 DIMENSIONS IN MILLIMETERS AND (INCHES)
MAXIMUM RATINGS
RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED.
PATING
SYMBOL
COLLECTOR − EMITTER VOLTAGE COLLECTOR − BASE VOLTAGE EMITTER − BASE VOLTAGE COLLECTOR CURRENT − CONTINUOUS
VCEO VCBO VEBO
IC
TOTAL DEVICE DISSIPATION
PD
OPERATING AND STORAGE JUNCTION TEMPERATURE RANGE
TJ;TSTG
NOTE:1.Indicates Data in addition to JEDEC Requirements.
MMBT2222
30 60 5.0
600 225
- 55 TO +150
MMBT2222A
40 75 6.0
UNITS
V V V mA mW
℃
STD-2008-Z3
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MMBT2222/MMBT2222A
ELECTRICAL CHARACTERISTICS
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