MMBT2369A

MMBT2369 / MMBT2369A NPN Silicon Switching Transistor TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation FR-5 Board 1) Thermal Resistance Junction to Ambient Junction and Storage Temperature Range 1) FR-5=10.750.062 in. Symbol VCBO VCEO VCES VEBO IC Ptot RJA TJ,TStg Value 40 15 40 4.5 200 225 556 -55 to +150 Unit V V V V mA mW OC/W OC SEMTECH ELECTRONICS LTD. ® Dated : 05/11/2015 Rev:02 MMBT2369 / MMBT2369A Characteristics at Tamb=25 OC Parameter DC Current Gain at VCE = 1 V, IC = 10 mA at VCE = 1 V, IC = 10 mA at VCE = 0.35 V, IC = 10 mA at VCE = 0.35 V, IC = 10 mA,TA = -55OC at VCE = 0.4 V, IC = 30 mA at VCE = 2.0 V, IC = 100 mA at VCE = 1.0 V, IC = 100 mA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 10 mA, IB = 1 mA at IC = 10 mA, IB = 1 mA,TA = +125OC at IC = 30 mA, IB = ...