PNP EPITAXIAL SILICON TRANSISTOR
MMBT2907/ALT1
GENERAL PURPOSE TRANSISTOR ▪ Complement to MMBT2222/ALT1 ▪ Collector Dis...
PNP EPITAXIAL SILICON
TRANSISTOR
MMBT2907/ALT1
GENERAL PURPOSE
TRANSISTOR ▪ Complement to MMBT2222/ALT1 ▪ Collector Dissipation: Pc(max)=225mW
Package:SOT-23
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic
Symbol Rating
2907 2907A
Collector-Base Voltage
Vcbo
-60
Collector-Emitter Voltage
Vceo -40 -60
Emitter-Base Voltage
Vebo
-5
Collector Current
Ic -600
Collector Dissipation Ta=25℃*
PD
225
Junction Temperature
Tj 150
Storage Temperature
Tstg -55-150
Unit
V V V mA mW ℃ ℃
PIN: STYLE
NO 1
123 BEC
ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic
Symbol Min Max Unit
Test Conditions
Collector-Base Breakdown Voltage
BVcbo -60
V Ic=-10uA Ie=0
Collector-Emitter Breakdown Voltage MMBT2907 MMBT2907A
BVceo
-40 -60
V Ic= -10mA Ib=0
Emitter-Base Breakdown Voltage
BVebo -5
V Ie= -10uA Ic=0
Emitter Cutoff Current
Icex -50 nA Vce=-30V
VBE(OFF) = –0.5Vdc
Collect Cutoff Current
MMBT2907 MMBT2907A
Icbo
-20 Vcb= -50V Ie=0 nA
-10 Vcb= -50V...