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MMBT3906

Taiwan Semiconductor

PNP Small Signal Transistor

Small Signal Product MMBT3906 Taiwan Semiconductor 350mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die...


Taiwan Semiconductor

MMBT3906

File Download Download MMBT3906 Datasheet


Description
Small Signal Product MMBT3906 Taiwan Semiconductor 350mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) SOT-23 MECHANICAL DATA - Case: SOT- 23, molded plastic - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260oC/10s - Weight: 0.008g (approximately) - Marking Code: 2A MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation PD 350 Collector-Base Voltage VCBO -40 Collector-Emitter Voltage VCEO -40 Emitter-Base Voltage VEBO -5 Collector Current IC -200 Thermal Resistance Junction-Ambient RθJA 357 Junction and Storage Temperature Range TJ , TSTG -55 to + 150 Notes:1. V...




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