MMBT4124

MEI SEMI INC. Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z NPN Silicon Planar. z Switching Transistor. Pb Lead-free MMBT4124 ORDERING INFORMATION Type No. Marking MMBT4124 ZC SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 30 VCEO Collector-Emitter Voltage 25 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 0.2 PC Collector Dissipation 330 Tj，Tstg Junction and Storage Temperature -55~150 Units V V V A mW ℃ Document number: SSSTC232 Rev.A www.meisemi.com 1 MEI SEMI INC. Production specification NPN Silicon Epitaxial Planar Transistor MMBT4124 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 25 V Emitter-base breakdown voltage V(...