Switching Transistor PNP Silicon
M aximum R atings
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base...
Switching
Transistor PNP Silicon
M aximum R atings
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous
Symbol
VCEO VCBO VEBO
IC
MMBT4403
COLLECTOR 3
1 BASE
2 EMITTER
3
1 2
SOT-23
Value -40 -40 -5.0
-600
Unit Vdc Vdc Vdc mAdc
Thermal Characteristics
Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate, (2) TA=25 C Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Symbol
PD R qJA
PD R qJA TJ,Tstg
Max 225
1.8 556 300
2.4 417 -55 to +150
Device Marking
MMBT4403=2T
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Off Characteristics
Collector-Emitter Breakdown Voltage(3) (IC=-1.0mAdc.IB=0)
Collector-Base Breakdown Voltage (IC=-0.1mAdc, IE=0)
Emitter-Base Breakdown Voltage (IE=-0.1mAdc, IC=0)
Base Cutoff Current (VCE=-35 Vdc, VEB =-0....
