MMBT5087

MMBT5087 PNP Silicon Epitaxial Planar Transistor for general purpose application Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 100 µA at -VCE = 5 V, -IC = 1 mA at -VCE = 5 V, -IC = 10 mA Collector Cutoff Current at -VCB = 35 V Emitter Cutoff Current at -VEB = 3 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA Base Emitter On Voltage at -VCE = 5 V, -IC = 1 mA Transition Frequency at -VCE = 5 V, IE = 0.5 mA, f = 100 MHz Collector Base Capacitance at -VCE = 5 V, IE = 0 , f = 100 KHz SOT-23 Plastic Package Symbol -VCBO -VCEO -VEBO -IC -ICM Ptot Tj TS Value 50 50 3 100 200 ...