MMBT5089

MMBT5089【NPN Transistors / 200mW / SOT-23】 Features ◆ For low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50mA. PACKAGE OUTLINE Absolute Maximum Ratings【TA=25℃】 Parameter Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current VCBO VCEO VEBO Ic Power Dissipation Derate above 25℃ PD DC Current Gain Small Signal Current Gain Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Collector Emitter Saturation Voltage Base Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current VCE=5V, IC=100uA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=1mA, f=1KHz IC=100μA IC=1mA IC=10mA, IB=1mA IC=10mA, VCE=5V VCB=15V VEB=3V VEB=4.5V hFE hfe V(BR)CBO V(BR)CEO VCEsat VBEon ICBO IEBO Collector Base Capacitance VCB=5V, f = 100KHz Ccb Emitter Base Capacitance VBE=0.5V, f = 100KHz Gain Bandwidth Product VCE=5V, IC=500μA, f=20MHz Noise Figure VCE=5V, IC=100μA, Rs=10K...