MMBT5401

SMD High Voltage Transistor (PNP) Features This device is designed for high voltage driver applications RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD High Voltage Transistor (PNP) MMBT5401 SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT5401 Marking Code 2L -VCBO Collector-Base Voltage 160 -VCEO Collector-Emitter Voltage 150 -VEBO Emitter-Base Voltage 5 -IC Collector Current 500 Ptot Power Dissipation up to TA=25°C 250 RθJA Thermal Resistance, Junction to Ambient 500 TJ Junction Temperature 150 TSTG Storage Temperature Range -55 to +150 Unit V V V mA mW K/W °C °C TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. A/AH 2009-01-12 Page 1 of 3 SMD High Voltage Transistor (PNP) Electrical Characteristics (T...