Document
Elektronische Bauelemente
MMBT5401
PNP Silicon General PurposeTransistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Ideal for medium power amplification and switching
MARKING
2L
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector to Emitter Voltage Collector to Base Voltage Emitter to Base Voltage Collector Current - Continuous
Symbol Ratings
VCEO VCBO VEBO
IC
-150 -160 -5.0 -500
Unit
V V V mA
SOT-23
A
L
3
Top View
CB
12
KE
1
3 2
D F GH J
REF.
A B C D E F
Millimeter Min. Max.
2.80 2.25 1.20
3.00 2.55 1.40
0.90 1.15
1.80 2.00
0.30 0.50
REF.
G H J K L
Millimeter Min. Max.
0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF.
0.95 TYP.
THERMAL CHARACTERISTICS
Parameter
Symbol
Total Power Dissipation Thermal Resistance, Junction to Ambient Total Power Dissipation Thermal Resistance, Junction to Ambient Junction, Storage Temperature
TA = 25°C Derate above 25°C
Alumina Substrate,(2) TA = 25°C Derate above 25°C
PD
RθJA PD RθJA TJ, TSTG
.