Preliminary Technical Information
BiMOSFETTM Monolithic Bipolar MOS Transistor
IXBN75N170
VCES IC90
VCE(sat)
= =
≤
...
Preliminary Technical Information
BiMOSFETTM Monolithic Bipolar MOS
Transistor
IXBN75N170
VCES IC90
VCE(sat)
= =
≤
1700V 75A 3.1V
Symbol
VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA)
PC TJ TJM Tstg TL TSOLD VISOL
Md
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous
1700 1700
±20
V V V
Transient
±30 V
TC = 25°C TC = 90°C TC = 25°C, 1ms
VGE= 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load
TC = 25°C
145 75
680
ICM = 150 VCE < 0.8 VCES
625
-55 ... +150
A A A A
W °C
150 °C
-55 ... +150
°C
Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10
300 °C 260 °C
50/60Hz IISOL ≤ 1mA
t = 1min t = 1s
Mounting Torque
Terminal Connection Torque (M4)
2500 3000
1.5/13 1.3/11.5
V~ V~
Nm/lb.in. Nm/lb.in.
30 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 1.5mA, VCE = VGE
ICES VCE = 0.8 VCES, VGE = 0V TJ = 125°C
...
