Preliminary Technical Information
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBN42N170A
VC...
Preliminary Technical Information
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS
Transistor
IXBN42N170A
VCES =
IC90 =
VCE(sat) tfi
≤ =
1700V
21A
6.0V 20ns
E
Symbol VCES VCGR VGES VGEM IC25 IICCM90 SSOA (RBSOA)
T(SSCC SOA)
PC TJ TJM Tstg VISOL
Md
Weight
Test Conditions
TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous
Transient
TC = 25°C
TTCC
= =
90°C 25°C,
1ms
VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load
VRGGE==1105ΩV, ,nVonCErSe=pe1t2it0iv0eV, TJ = 125°C TC = 25°C
50/60Hz IISOL ≤ 1mA
t = 1min t = 1s
Mounting Torque Terminal Connection Torque
Maximum Ratings
1700 1700
V V
± 20 V ± 30 V
38 A 21 A 265 A
ICM = 84 1360
A V
10
313
-55 ... +150 150
-55 ... +150
2500 3000
1.5/13 1.3/11.5
30
μs
W
°C °C °C
V~ V~
Nm/lb.in. Nm/lb.in.
g
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 750μA, VCE = VGE
ICES VCE = 0.8 VCES, VGE = 0V
IGES VCE(sat)
V...
