SSF2116EJ3

Main Product Characteristics: VDSS 20V RDS(on) 14.5mohm（typ.） ID 8.5A DFN2X5-6L-EP SSF2116EJ3 Marking and pin Assignment Schematic diagram Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 25°C IDM VGS PD @TC = 25°C TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current ② Gate to sou...