MOSFET
SSFN2269
DESCRIPTION
The SSFN2269 uses advanced trench technology to provide excellent RDS(ON), low gate charge and ope...
Description
SSFN2269
DESCRIPTION
The SSFN2269 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
GENERAL FEATURES
● VDS = -20V,ID =-3.3A RDS(ON) < 90mΩ @ VGS=-4.5V RDS(ON) < 120mΩ @ VGS=-2.5V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Schematic diagram Marking and pin Assignment
Application
●Battery protection ●Load switch ●Power management
DFN2X2-6L
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSFN2269
SSFN2269
DFN2X2-6L
-
Tape width -
Quantity -
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-20 ±8 -3.3 -20 1.5 -55 To 150
Unit
V V A A W ℃
THERMA...
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