MOSFET
SSFN2316E
GENERAL FEATURES
● VDS = 20V,ID = 6.5A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ V...
Description
SSFN2316E
GENERAL FEATURES
● VDS = 20V,ID = 6.5A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4V RDS(ON) < 23mΩ @ VGS=4.5V
ESD Rating:2000V HBM
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Application
●Battery protection ●Load switch ●Power management
Schematic diagram Pin Assignment
GEM2928-8L TOP VIEW
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
N2316E
SSFN2316E
GEM2928-8L
-
Tape width -
Quantity -
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20 ±12 6.5 40 1.4 -55 To 150
Unit
V V A A W ℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
ELECTRICAL CHAR...
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