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SSFN2316E

Silikron

MOSFET

SSFN2316E GENERAL FEATURES ● VDS = 20V,ID = 6.5A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ V...


Silikron

SSFN2316E

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SSFN2316E GENERAL FEATURES ● VDS = 20V,ID = 6.5A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4V RDS(ON) < 23mΩ @ VGS=4.5V ESD Rating:2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●Battery protection ●Load switch ●Power management Schematic diagram Pin Assignment GEM2928-8L TOP VIEW PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size N2316E SSFN2316E GEM2928-8L - Tape width - Quantity - ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±12 6.5 40 1.4 -55 To 150 Unit V V A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA ELECTRICAL CHAR...




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