MOSFET
Main Product Characteristics:
VDSS RDS(on)
75V 2.5mΩ(typ.)
ID 220A ①
Features and Benefits:
TO-263-7L
Advanced M...
Description
Main Product Characteristics:
VDSS RDS(on)
75V 2.5mΩ(typ.)
ID 220A ①
Features and Benefits:
TO-263-7L
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSF7504A7
1, Gate 2~3,5~7 Source 4,8 Drain PinAssignment Schematic Diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V ① Continuous Drain Current, VGS @ 10V ① Pulsed Drain Current ② Power Dissipation ...
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