SSF20N60H

Main Product Characteristics: VDSS 600V RDS(on) 0.2ohm(typ.) ID 20A Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance TO247 SSF20N60H Marking and pin Assignment Schematic diagram Description: The SSF20N60H series MOSFETs is a new technology，which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving. Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=32mH Avalanche Current @ L=32mH Operating Junction and Storage Temperature Range Max. 2...