MOSFET
Main Product Characteristics:
VDSS
600V
RDS(on) 3.6ohm(typ.)
ID 2A
Features and Benefits:
TO220F
Advanced MOSFE...
Description
Main Product Characteristics:
VDSS
600V
RDS(on) 3.6ohm(typ.)
ID 2A
Features and Benefits:
TO220F
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
SSF2N60F
Marking and pin Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drai...
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