MOSFET
Main Product Characteristics:
VDSS
30V
RDS(on) 5.0mohm(typ.) ID 50A
Features and Be...
Description
Main Product Characteristics:
VDSS
30V
RDS(on) 5.0mohm(typ.) ID 50A
Features and Benefits:
TO252
Advanced trench MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSFM3008L
SSSSFMM33000088L
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve the high cell density and reduces the on-resistance, fast switching and soft reverse recovery time. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Param...
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