MOSFET
Main Product Characteristics:
VDSS
30V
RDS(on) 28mohm(typ.)
ID 21A Features and Benefits:
TO-252
Advanced MOSFET...
Description
Main Product Characteristics:
VDSS
30V
RDS(on) 28mohm(typ.)
ID 21A Features and Benefits:
TO-252
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSF3028C1
Marking and pin Schematic diagram Assignment
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drai...
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