SSF3002EG1

Main Product Characteristics: VDSS 30V RDS(on) 1ohm(typ.) ID 0.5A① SOT23 Features andBenefits:  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  ESD Protected, HBM 1KV SSF3002EG1 Marking and pin Assignment Schematic diagram Description: It utilizes the latest trench processing techniquesto achieve the high cell density and reduces the on-resistance with high repetitiveavalanche rating. These features combine to makethis design an extremely efficient and reliable devicefor use in power switching applicationand a wide varietyof other applications Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current② Power Dissipation Drain-Sou...