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SSF32E0E

Silikron

MOSFET

GENERAL FEATURES ● VDS =30V,ID = 0.1A RDS(ON) < 8Ω @ VGS=4V RDS(ON) < 13Ω @ VGS=2.5V ESD Rating:1000V HBM ● High Power a...


Silikron

SSF32E0E

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GENERAL FEATURES ● VDS =30V,ID = 0.1A RDS(ON) < 8Ω @ VGS=4V RDS(ON) < 13Ω @ VGS=2.5V ESD Rating:1000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package SSF32E0E Schematic diagram APPLICATION ●Direct Logic-Level Interface: TTL/CMOS ●Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. ●Battery Operated Systems ●Solid-State Relays Marking and pin Assignment SOT-523 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size S32E SSF32E0E SOT-523 Ø180mm Tape width 8 mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID ID (70℃) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 30 ±20 0.1 0.07 0.4 0.2 -55 To 150 Unit V V A A W ℃ T...




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