SSF1116A

SSF1116A Feathers: „ Advanced trench process technology „ avalanche energy, 100% test „ Fully characterized avalanche voltage and current ID =75A BV=110V Rdson=12mΩ (Typ.) Description: The SSF1116A is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1116A is assembled in high reliability and qualified assembly house. Application: „ Power switching application Absolute Maximum Ratings Parameter ID@Tc=25 ْC Continuous drain current,VGS@10V ID@Tc=100ْC Continuous drain current,VGS@10V IDM PD@TC=25ْC Pulsed drain current ① Power dissipation Linear derating factor VGS EAS EAR dv/dt Gate-to-Source voltage Single pulse avalanche energy ② Repetitive avalanche energy Peak diode recovery voltage TJ TSTG Operating Junction and Storage Temperature Range SSF1116A TOP View (D2PAK) Max. 75 61 300 272 1.5 ±20 300 TBD 31 –55 t...