Document
SSF1020A
Feathers:
ID =60A
Advanced trench process technology
BV=100V
Ultra low Rdson, typical 16mohm
Rdson=20mΩ(max.)
High avalanche energy, 100% test
Fully characterized avalanche voltage and current
Description:
The SSF1020A is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
SSF1020A TOP View (D2PAK)
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF1020A is
assembled in high reliability and qualified assembly house.
Application:
Power switching application
Absolute Maximum Ratings
Parameter
ID@Tc=25 ْC Continuous drain current,VGS@10V
ID@Tc=100ْC Continuous drain current,VGS@10V
IDM Pulsed drain current ① PD@TC=25ْC Power dissipation
Linear derating factor
VGS Gate-to-Source voltage
EAS Single pulse avalanche energy
EAR Repetitive avalanche energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
②
.