NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/510
Devices
2N6249 2N6250
2N6251
TECHNICAL DATA
Qualified L...
NPN POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/510
Devices
2N6249 2N6250
2N6251
TECHNICAL DATA
Qualified Level JAN
JANTX JANTXV JANHC
MAXIMUM RATINGS
Ratings
Symbol 2N6249 2N6250 2N6251
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA = +250C (1)
@ TC = +250C (2) Operating & Storage Temp Range
THERMAL CHARACTERISTICS
VCEO VCBO VEBO
IC IB
PT
Top, Tstg
200 275
300 375
6.0
10
5.0
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5.5 175
-55 to +200
350 450
Characteristics
Symbol
Max.
Thermal Resistance, Junction-to-Case
RθJC
1) Derate linearly at 34.2 mW/0C for TA > +250C
2) Derate linearly at 1.0 W/0C for TC > +250C
1.0
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc; L = 42 mH; F = 30-60 Hz (See Figure 3 of MIL-PRF-19500/510)
2N6249 2N6250
V(BR)CEO
2N6251
Collector-Emitter Breakdown Vol...