VHF AMPLIFIER. 3N201 Datasheet

3N201 AMPLIFIER. Datasheet pdf. Equivalent

Part 3N201
Description DUAL GATE MOSFET VHF AMPLIFIER
Feature 3N201-3N203 High-reliability discrete products and engineering services since 1977 DUAL GATE MOSFE.
Manufacture Digitron Semiconductors
Datasheet
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3N201 Datasheet
3N201 Datasheet
3N201-3N203 High-reliability discrete products and engineer 3N201 Datasheet
Recommendation Recommendation Datasheet 3N201 Datasheet




3N201
3N201-3N203
High-reliability discrete products
and engineering services since 1977
DUAL GATE MOSFET VHF AMPLIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Drain-source voltage
Drain-gate voltage
Drain current
Gate current
Total device dissipation @ TA = 25°C
Derate above 25°C
Total device dissipation @ TC = 25°C
Derate above 25°C
Lead temperature
Junction temperature range
Storage temperature range
Symbol
VDS
VDG1
VDG2
ID
IG1
IG2
PD
PD
TL
TJ
Tstg
Value
25
30
50
±10
360
2.4
1.2
8.0
300
-65 to 175
-65 to 175
Unit
Vdc
Vdc
mAdc
mAdc
mW
mW/°C
W
mW/°C
°C
°C
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C)
Characteristic
OFF CHARACTERISTICS
Drain-source breakdown voltage
(ID = 10µAdc, VS = 0, VG1S = VG2S = -5.0Vdc)
Gate 1-source breakdown voltage (1)
(IG1 = ±10mAdc, VG2S = VDS = 0)
Gate 2-source breakdown voltage (1)
(IG2 = ±10mAdc, VG1S = VDS = 0)
Gate 1 leakage current
(VG1S = ±5.0Vdc, VG2S = VDS = 0)
(VG1S = -5.0Vdc, VG2S = VDS = 0, TA = 150°C)
Gate 2 leakage current
(VG2S = ±5.0Vdc, VG1S = VDS = 0)
(VG2S = -5.0Vdc, VG1S = VDS = 0, TA = 150°C)
Gate 1 to source cutoff voltage
(VDS = 15Vdc, VG2S = 4.0Vdc, ID = 20µAdc)
Gate 2 to source cutoff voltage
(VDS = 15Vdc, VG1S = 0, ID = 20µAdc)
ON CHARACTERISTICS
Zero-gate voltage drain current (2)
(VDS = 15Vdc, VG1S = 0, VG2S = 4.0Vdc)
Symbol
Min
Typ
Max
V(BR)DSX
V(BR)G1SO
V(BR)G2SO
IG1SS
IG2SS
VG1S(off)
VG2S(off)
25 -
±6.0 ±12
±6.0 ±12
- ±0.040
--
- ±0.050
--
-0.5 -1.5
-0.2 -1.4
-
±30
±30
±10
-10
±10
-10
-5.0
-5.0
Unit
Vdc
Vdc
Vdc
nAdc
µAdc
nAdc
µAdc
Vdc
Vdc
3N201, 3N202
3N203
IDSS 6.0 13
3.0 11
30
15
mAdc
Rev. 20120705



3N201
3N201-3N203
High-reliability discrete products
and engineering services since 1977
DUAL GATE MOSFET VHF AMPLIFIER
ELECTRICAL CHARACTERISTICS (TC = 25°C)
Characteristic
Symbol
Min
Typ
Max
SMALL SIGNAL CHARACTERISTICS
Forward transfer admittance(3)
(VDS = 15Vdc, VG2S = 4.0Vdc, VG1S = 0, f = 1.0kHz)
3N201, 3N202
3N203
|Yfs|
8.0 12.8 20
7.0 12.5 15
Input capacitance
(VDS = 15Vdc, VG2S = 4.0Vdc, ID = IDSS, f = 1.0MHz)
Reverse transfer capacitance
(VDS = 15Vdc, VG2S = 4.0Vdc, ID = 10mAdc, f = 1.0MHz)
Output capacitance
(VDS = 15Vdc, VG2S = 4.0Vdc, ID = IDSS, f = 1.0MHz)
FUNCTIONAL CHARACTERISTICS
Ciss - 3.3 -
Crss
0.005 0.014
0.03
Coss - 1.7 -
Noise figure
(VDD = 18Vdc, VGG = 7.0Vdc, f = 200MHz)
(VDD = 18Vdc, VGG = 6.0Vdc, f = 45MHz)
3N201
3N203
NF - 1.8 4.5
- 5.3 6.0
Common source power gain
(VDD = 18Vdc, VGG = 7.0Vdc, f = 200MHz)
(VDD = 18Vdc, VGG = 6.0Vdc, f = 45MHz)
(VDD = 18Vdc, fLO = 245MHz, fRF = 200MHz)
3N201
3N203
3N202
Gps
Gc(5)
15 20 25
20 25 30
15 19 25
Bandwidth
(VDD = 18Vdc, VGG = 7.0Vdc, f = 200MHz)
(VDD = 18Vdc, fLO = 245MHz, fRF = 200MHz)
(VDD = 18Vdc, VGG = 6.0Vdc, f = 45MHz)
3N201
3N202
3N203
BW
5.0 - 9.0
4.5 - 7.5
3.0 - 6.0
Gain control gate-supply voltage (4)
(VDD = 18Vdc, ΔGps = -30dB, f = 200MHz)
3N201
VGG(GC)
0 -1.0 -3.0
(VDD = 18Vdc, ΔGps = -30dB, f = 45MHz)
3N203
0 -0.6 -3.0
Note 1: All gate breakdown voltages are measured while the device is conducting rated gate current. This ensures that the gate-voltage limiting network is functioning properly.
Note 2: Pulse test: pulse width = 300µs. Duty cycle ≤ 2.0%.
Note 3: This parameter must be measured with bias voltages applied for less than 5 seconds to avoid overheating.
Note 4: ΔGps is defined as the change from the value at VGG = 7.0V and VGG = 6.0V.
Note 5: Power gain conversion.
Unit
mmhos
pF
pF
pF
dB
dB
MHz
Vdc
Rev. 20120705





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