DUAL GATE MOSFET VHF AMPLIFIER
3N201-3N203
High-reliability discrete products and engineering services since 1977
DUAL GATE MOSFET VHF AMPLIFIER
FEA...
Description
3N201-3N203
High-reliability discrete products and engineering services since 1977
DUAL GATE MOSFET VHF AMPLIFIER
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS Rating
Drain-source voltage
Drain-gate voltage
Drain current
Gate current
Total device dissipation @ TA = 25°C Derate above 25°C Total device dissipation @ TC = 25°C Derate above 25°C Lead temperature Junction temperature range Storage temperature range
Symbol VDS VDG1 VDG2 ID IG1 IG2
PD
PD
TL TJ Tstg
Value 25
30
50
±10
360 2.4 1.2 8.0 300 -65 to 175 -65 to 175
Unit Vdc
Vdc
mAdc
mAdc
mW mW/°C
W mW/°C
°C °C °C
ELECTRICAL CHARACTERISTICS (TC = 25°C) Characteristic
OFF CHARACTERISTICS
Drain-source breakdown voltage (ID = 10µAdc, VS = 0, VG1S = VG2S = -5.0Vdc)
Gate 1-source breakdown voltage (1) (IG1 = ±10mAdc, VG2S...
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