3N202

3N201-3N203 High-reliability discrete products and engineering services since 1977 DUAL GATE MOSFET VHF AMPLIFIER FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Drain-source voltage Drain-gate voltage Drain current Gate current Total device dissipation @ TA = 25°C Derate above 25°C Total device dissipation @ TC = 25°C Derate above 25°C Lead temperature Junction temperature range Storage temperature range Symbol VDS VDG1 VDG2 ID IG1 IG2 PD PD TL TJ Tstg Value 25 30 50 ±10 360 2.4 1.2 8.0 300 -65 to 175 -65 to 175 Unit Vdc Vdc mAdc mAdc mW mW/°C W mW/°C °C °C °C ELECTRICAL CHARACTERISTICS (TC = 25°C) Characteristic OFF CHARACTERISTICS Drain-source breakdown voltage (ID = 10µAdc, VS = 0, VG1S = VG2S = -5.0Vdc) Gate 1-source breakdown voltage (1) (IG1 = ±10mAdc, VG2S...