RECOVERY RECTIFIER. MUR1010CT Datasheet

MUR1010CT RECTIFIER. Datasheet pdf. Equivalent

Part MUR1010CT
Description SUPER FAST RECOVERY RECTIFIER
Feature MUR1005CT THRU MUR1060CT SUPER FAST RECOVERY RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Cu.
Manufacture GOOD ELECTRONIC
Datasheet
Download MUR1010CT Datasheet

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MUR1010CT
MUR1005CT THRU MUR1060CT
SUPER FAST RECOVERY RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current - 10.0 Ampere
TO-220AB
FEATURES
0.419(10.66)MAX.
Ø 0.139(3.55)
MIN
0.054(1.39)
0.045(1.15)
0.196(5.0)
0.163(4.16)
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0.
Flame Retardant Epoxy Molding Compound.
Exceeds environmental of MIL-S-19500/228
Low power loss, high efficiency.
Low forward voltage, high current capability.
High surge capability.
Super fast recovery times, high voltage.
Epitaxial chip construction.
In compliance with EU RoHS 2002/95/EC directives.
Pin 1
0.058(1.47)
0.042(1.07)
0.038(0.96)
0.019(0.50)
0.1(2.54)
Typ.
0.025(0.65)
MAX
Dimensions in inches and (millimeters)
0.115(2.92)
0.080(2.03)
MECHANICAL DATA
Case: TO-220AB, Molded plastic.
Terminals: Solderable per MIL-STD-750Method 2026
Weight: 1.859 gram (0.0655 ounces).
Standard Packaging : Tube.
AC 1
AC 3
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwis e specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
PARAMETER
Maximum Recurrenent Peak Reverse Voltage
SYMBOLS MUR1005CT MUR1010CT MUR1020CT MUR1040CT MUR1060CT UNITS
VRRM
50
100 200 400 600 Volts
Maximum RMS Voltage
VRMS
35
70 140 280 420 Volts
Maximum DC Breakdown Voltage
VDC
50
100 200 400 600 Volts
Maximum Average Forward Current at TC =100°C
Peak Forward Surge Current, 8.3ms single half sinewave
superimposed on rated olad(JEDEC methode)
Maximum Forward Voltage at 5A
Maximum DC Reverse Current at TJ=25°C Rated DC
Blocking Voltage TJ=100°C
Maximum Reverse Recovery Time (NOTE 2)
IF(AV)
IFSM
VF
IR
trr
10.0 Amp
125 Amps
0.95
1.30
1.70
Volts
1.0
500
µA
35 50 nS
Typical Junction Capacitance (NOTE 1)
CJ
62 pF
Typical Thermal Resistance
Rθ JC
3.0 °C/W
Operating and Storage Temperature Range
TSTG
-55 +150
°C
Note: 1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1A, Irr=0.25A.
3. Both Bonding and Chip structure are availiable.
GOOD ELECTRONIC CO., LTD



MUR1010CT
MUR1005CT THRU MUR1060CT
RATINGS AND CHARACTERISTIC CURVES
FIG. 1- FORWARD CURRENT DERATING CURVE
10
8
6
4
LEADLENGHTS
RESISTIVEORINDUCTIVELOAD
2
0
0 20 40 60 80 100 120 140 160
CASE TEMPERATURE, °C
FIG. 2-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
50V-200V
400V
10 600V
1
0.1
0.6
0.8 1.0 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD VOLTAGE (V)
FIG. 3-TYPICAL REVERSE CHARACTERISTICS
1000
100
TJ=125°C
TJ= 75°C
10
1 TJ= 25°C
0.1
20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK INVERSE VOLTAGE (%)
FIG. 4-MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
0
1
8.3ms Single
HalfSince-Wave
JEDEC Method
2 5 10 20 50 100
No. of CYCLE at 60Hz
GOOD ELECTRONIC CO., LTD





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