SILICON RECTIFIER. MURF1040CT Datasheet

MURF1040CT RECTIFIER. Datasheet pdf. Equivalent

Part MURF1040CT
Description SUPER FAST RECOVERY SILICON RECTIFIER
Feature MURF1005CT THRU MURF1060CT SUPER FAST RECOVERY SILICON RECTIFIER Reverse Voltage - 50 to 600 Volts F.
Manufacture KD
Datasheet
Download MURF1040CT Datasheet

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MURF1040CT
MURF1005CT THRU MURF1060CT
SUPER FAST RECOVERY SILICON RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current - 10.0 Ampere
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Super fast switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.25(6.35mm) from case
MECHANICAL DATA
Case: JEDEC ITO-220AB molded plastic body
Terminals: Plated leads, solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250oC/10 seconds, 0.25" (6.35mm) from case
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 ounce, 2.24 grams
ITO-220AB
.406(10.3)
.386(9.8)
.138(3.5)
.122(3.1)
.118(3.0)
.102(2.6)
.189(4.8)
.173(4.4)
.118(3.0)
.106(2.7)
.157(4.0)
.142(3.6)
.610(15.5)
.571(14.5)
.059(1.5)
.043(1.1)
.030(0.76)
.020(0.51)
.112(2.84)
.088(2.24)
.071(1.8)
.055(1.4)
.571(14.5)
.531(13.5)
.114(2.9)
.098(2.5)
.030(0.76)
.020(0.51)
Dimensions in inches and (millimeters)
PIN 1 -
PIN 3 -
+
PIN 2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@TC = 100°C
Non-Repetitive Peak Forward Surge
Current 8.3ms Single half sine-wave
superimposed on rated load (JEDEC Method)
Forward Voltage
@IF = 5.0A
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 125°C
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
Symbol
MURF
1005CT
MURF
1010CT
MURF
1015CT
MURF
1020CT
MURF
1030CT
MURF
1040CT
MURF
1060CT
Unit
VRRM
VRWM 50 100 150 200 300 400 600 V
VR
VR(RMS)
35
70 105 140 210 280 420 V
IO 10 A
IFSM
VFM
IRM
trr
Cj
Tj, TSTG
150
0.95
10
400
35
80
-65 to +150
1.3
50
50
A
1.7 V
µA
nS
pF
°C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.



MURF1040CT
12
10
8
6
4
2
0
0
100
80
60
40
20
0
1
MURF1005CT THRU MURF1060CT
RATINGS AND CHARACTERISTIC CURVES
50
50V-200V
10
1 300V-400V
600V
.1
50 100 150 .01
0.4 0.6 0.8 1.0
1.2 1.4 1.6 1.8
400
100
TJ =25
F=1.0MHZ
Vsig=50mVp-p
50V-400V
600V
10
0.1 1 10
10 50 100
1000
100
TJ =125
10
1
TJ =25
.1
0 20 40 60 80 100
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(+)
50Vdc
(approx)
(-)
DUT
OSCILLOSCOPE
NON
(NOTE 1)
INDUCTIVE
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm SET TIME BASE FOR
5/ 10ns/ cm
100





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