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MBR3035CT

Sirectifier Semiconductors

Schottky Barrier Diodes

MBR3030CT thru MBR3045CT High Tjm Low IRRM Schottky Barrier Diodes AC A C(TAB) A C A A=Anode, C=Cathode, TAB=Cathode...


Sirectifier Semiconductors

MBR3035CT

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Description
MBR3030CT thru MBR3045CT High Tjm Low IRRM Schottky Barrier Diodes AC A C(TAB) A C A A=Anode, C=Cathode, TAB=Cathode MBR3030CT MBR3035CT MBR3040CT MBR3045CT VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 VDC V 30 35 40 45 Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Symbol Characteristics I(AV) Maximum Average Forward Rectified Current @TC=100oC IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) dv/dt Voltage Rate Of Change (Rated VR) VF Maximum Forward Voltage (Note 1) IF=30A @TJ=125oC IF=15A @TJ=25oC IF=30A @TJ=25oC IR Maximum DC Reverse Current At Rated DC Blocking V...




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