www.vishay.com
MBRB1090-M3, MBRB10100-M3
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifi...
www.vishay.com
MBRB1090-M3, MBRB10100-M3
Vishay General Semiconductor
High-Voltage Trench MOS Barrier
Schottky Rectifier
TMBS ®
TO-263AB
K
2
1
MBRB1090 MBRB10100
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
Package
TO-263AB
IF(AV) VRRM IFSM
VF TJ max. Diode variation
10 A 90 V, 100 V
150 A 0.65 V 150 °C Single die
FEATURES Trench MOS
Schottky technology Lower power losses, high efficiency Low forward voltage drop High forward surge capability High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application.
MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Ma...
