JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-263-2L Plastic-Encapsulate Diodes
MBRB10150CT-B SCHOTTKY BARRIER ...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-263-2L Plastic-Encapsulate Diodes
MBRB10150CT-B
SCHOTTKY BARRIER RECTIFIER
FEATURES
Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop
TO-263-2L
1. ANODE 2. CATHODE 3. ANODE
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
Peak repetitive reverse voltage
VRWM
Working peak reverse voltage
VR(RMS) IO
IFSM
PD RΘJA
Tj Tstg
RMS reverse voltage Average rectified output current Non-Repetitive peak forward surge current 8.3ms half sine wave Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature
Value
150
105 10 120 2 50 125 -55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Reverse voltage
V(BR)
IR=0.1mA
Reverse current
IR VR=150V
Forward volta...