Power MOSFET. IRF540A Datasheet

IRF540A MOSFET. Datasheet pdf. Equivalent


nELL IRF540A
SEMICONDUCTOR
IRF540 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(28A, 100Volts)
DESCRIPTION
The Nell IRF540 are N-Channel enhancement mode silicon
gate power field effect transistors. They are designed, tested
and guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation.
They are designed as an extremely efficient and reliable
device for use in a wide variety of applications such as
switching regulators. convertors,UPS, switching mode power
supplies and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These transistors can be operated directly from integrated
circuits.
FEATURES
RDS(ON) = 0.077Ω @ VGS = 10V
Ultra low gate charge(72nC Max.)
Low reverse transfer capacitance
(CRSS = 120pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
175°C operation temperature
D
GDS
TO-220AB
(IRF540A)
D (Drain)
G
(Gate)
S (Source)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
28
100
0.077 @ VGS = 10V
72
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage(Note 1)
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
VGS=10V, TC=25°C
VGS=10V, TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
lAR=28A, RGS=50Ω, VGS=10V
EAS
dv/dt
Single pulse avalanche energy(Note 2)
Peak diode recovery dv/dt(Note 3)
lAS=28A, L=440μH
Total power dissipation
PD
Derating factor above 25°C
TC=25°C
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.VDD ≤ 25V, L=440μH, lAS=28A, RG =25Ω, starting TJ =25°C
3.ISD ≤ 28A, di/dt ≤ 170A/µs, VDD V(BR)DSS, TJ ≤ 175°C.
VALUE
UNIT
100
100 V
±20
28
20
A
110
28
15 mJ
230 mJ
5.5 V /ns
150
1.20
W
W /°C
-55 to 175
-55 to 175
ºC
300
10 (1.1)
lbf.in (N.m)
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IRF540A Datasheet
Recommendation IRF540A Datasheet
Part IRF540A
Description N-Channel Power MOSFET
Feature IRF540A; SEMICONDUCTOR IRF540 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (28A, 100Volts.
Manufacture nELL
Datasheet
Download IRF540A Datasheet




nELL IRF540A
SEMICONDUCTOR
IRF540 Series RRooHHSS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
Rth(j-c)
Rth(c-s)
Rth(j-a)
PARAMETER
Thermal resistance, junction to case
Thermal resistance, case to heatsink
Thermal resistance, junction to ambient
Min.
Typ.
0.50
Max.
1.00
62
UNIT
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
STATIC
V(BR)DSS
▲ ▲V(BR)DSS/ TJ
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
IDSS
Drain to source leakage current
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
RDS(ON)
Static drain to source on-state resistance
VGS(TH)
gfS
Gate threshold voltage
Forward transconductance
DYNAMIC
CISS
Input capacitance
COSS
Output capacitance
CRSS
td(ON)
Reverse transfer capacitance
Turn-on delay time
tr Rise time
td(OFF)
Turn-off delay time
VGS = 0V, ID = 250µA
ID = 1mA, referenced to 25°C
VDS=100V, VGS=0V TC = 25°C
VDS=80V, VGS=0V
TC=125°C
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = 10V, lD = 17A (Note 1)
VGS=VDS, ID=250μA
VDS=50V, ID=17A
VDS = 25V, VGS = 0V, f =1MHz
VDD = 50V, ID = 17A,RD = 2.9Ω,
VGS = 10V, RG=9.1Ω (Note 1)
tf
QG
QGS
QGD
LD
LS
Fall time
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
Internal drain inductance
Internal source inductance
VDS = 80V, VGS = 10V, ID = 17A
Between lead, 6mm from
package and center of die
Min.
100
2.0
8.7
Typ.
0.13
1700
560
120
11
44
53
43
4.5
7.5
Max. UNIT
25.0
250
100
-100
0.077
4.0
V
V/ºC
μA
nA
Ω
V
S
pF
ns
72
11 nC
32
nH
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD
Is(ISD)
Diode forward voltage
Continuous source to drain current
ISD = 28A, VGS = 0V
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
2.5 V
28
ISM Pulsed source current
G
(Gate)
110 A
trr Reverse recovery time
Qrr Reverse recovery charge
tON Forward turn-on time
ISD = 17A, VGS = 0V,
dIF/dt = 100A/µs
S (Source)
180 360
1.3 2.8
ns
μC
Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%.
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nELL IRF540A
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
IRF540 Series RRooHHSS
Nell High Power Products
IRF 540 A
MOSFET series
N-Channel, IRF series
Current & Voltage rating, lD & VDS
28A / 100V
Package type
A = TO-220AB
Fig.1 Typical output characteristics,
TC=25°C
102
VGS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
101
4.5V
10-1
20µs pulse width
TC=25°C
100 101
Drain-to-Source voltage , VDS (volts)
Fig.2 Typical transfer characteristics
102
25°C
175°C
101
VDS=50V
20µs pulse width
4 5 6 7 8 9 10
Gate-to-Source voltage , VGS (volts)
Fig.3 Typical output characteristics,
TC=175°C
102
VGS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
101 4.5V
10-1
20µs pulse width
TC=175°C
100 101
Drain-to-Source voltage , VDS (volts)
Fig.4 Normalized On-Resistance vs. Temperature
3.0
lD =17A
2.5 VGS=10V
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120140160 180
Junction Temperature,TJ (°C)
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