POWER MOSFET. IRF630 Datasheet

IRF630 MOSFET. Datasheet pdf. Equivalent


Advanced Power Electronics IRF630
Advanced Power
Electronics Corp.
Ease of Paralleling
Fast Switching Characteristic
Simple Drive Requirement
IRF630
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
200V
RDS(ON)
0.4Ω
G ID 9.0A
S
Description
APEC MOSFET provide the power designer with the best combination of fast
switching , lower on-resistance and reasonable cost.
The TO-220 and package is universally preferred for all commercial-industrial
applications. The device is suited for switch mode power supplies ,DC-AC
converters and high current high speed switching circuits.
G
DS
TO-220(P)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Data & specifications subject to change without notice
Rating
200
±20
9.0
5.7
36
74
0.59
40
9
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
mJ
A
Max.
Max.
Value
1.7
62
Unit
/W
/W
200420071-1/4


IRF630 Datasheet
Recommendation IRF630 Datasheet
Part IRF630
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature IRF630; Advanced Power Electronics Corp. ▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Driv.
Manufacture Advanced Power Electronics
Datasheet
Download IRF630 Datasheet




Advanced Power Electronics IRF630
IRF630
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=125oC)
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=1mA
VGS=10V, ID=5.4A
VDS=VGS, ID=250uA
VDS=10V, ID=5.4A
VDS=200V, VGS=0V
VDS=160V, VGS=0V
VGS=±20V
ID=5.9A
VDS=160V
VGS=10V
VDD=100V
ID=5.9A
RG=12Ω,VGS=10V
RD=16Ω
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
200 - - V
- - 0.4 Ω
2 - 4V
- 4.2 -
S
- - 25 uA
- - 250 uA
- - ±100 nA
- 25 45 nC
- 4 - nC
- 14 - nC
- 10 - ns
- 29 - ns
- 32 - ns
- 24 - ns
- 630 1010 pF
- 210 - pF
- 65 - pF
- 1.6 2.4
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage3
trr Reverse Recovery Time3
Qrr Reverse Recovery Charge
Test Conditions
Tj=25, IS=9.0A, VGS=0V
IS=5.9A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.5 V
- 225 - ns
- 2.2 - uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT
OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
2/4



Advanced Power Electronics IRF630
16
T C =25 o C
12
10V
8.0V
7.0V
8
6.0V
4
V G =5.0V
0
02468
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50 0 50 100
T j , Junction Temperature ( o C)
150
Fig 3. Normalized BVDSS v.s. Junction
Temperature
10
8
T j = 150 o C
T j = 25 o C
6
4
2
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
IRF630
12
T C =150 o C
10
10V
8 .0V
7 .0V
8
6 6.0 V
4
V G =5 .0V
2
0
0 2 4 6 8 10 12 14
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I D =5.4A
V G =10V
2
1
0
-50 0 50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
150
1.2
1
0.8
0.6
0.4
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
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