Power MOSFET. IRF630 Datasheet

IRF630 MOSFET. Datasheet pdf. Equivalent


TRANSYS IRF630
IRF630
Power MOSFET
VDSS = 200V, RDS(on) = 0.40 ohm, ID = 9.0 A
Drain
D
Gate Drain Source
N
Channel
G
S
Symbol
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise
Parameter
Symbol
Test Conditions
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate Threshold Voltage
V(BR)DSS VGS = 0 VDC, ID = 250µA
IDSS
VDS = 200VDC, VGS = 0VDC
VDS = 160VDC, VGS = 0VDC Tj=125 C
IGSS
VGS(th)
VGS = +20VDC
VGS = -20VDC
VDS = VGS, ID = 250µA
Static Drain to Source On - Resistance RDS(on) VGS= 10VDC, ID = 3.1A
Gate Charge
Gate to Source Charge
Gate to Drain Charge
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn On Delay Time
Turn Off Delay Time
Rise Time
Fall Time
Continuous Source Current
Pulsed Source Current
Forward Voltage (Diode)
QG
QGS
QGD
CISS
COSS
CRSS
td(on)
td(off)
tr
ID = 5.9A
VDS = 160VDC,
VGS = 10VDC
VDS = 25VDC, VGS= 0VDC, f = 1.0MHZ
VDD = 100VDC, ID = 5.9A, RG = 12
RD = 16
tf
IS
ISM
VSD VGS = 0VDC, IS =9.0A, Tp = 300µS
Value
Min Typ
200 -
--
--
--
--
2.0 -
--
--
--
--
- 800
- 240
- 76
- 9.4
- 39
- 28
- 20
--
--
--
Max Unit
- Volt
25
250 µA
100
-100
4.0
nA
nA
Volt
0.40
43 nC
7.0 nC
23 nC
- pF
- pF
- pF
- nS
- nS
- nS
- nS
9.0 A
36 A
2.0 V
MAXIMUM RATINGS (Tj = 25 C unless stated otherwise)
Parameter
Symbol Condition
Value
Gate to Source Voltage
VGS
+/- 20V
Drain to Source
Voltage
Continuous Drain Current
VDSS
ID
200
9.0
Pulsed Drain Current
Total Power Dissapation
Thermal Resistance
(Junction to Ambient)
IDM
PD (TA = 25 C)
RTH (J-A)
36
74
62
Maximum Operating Temperature Range (Tj) -55 to +150 OC
Maximum Storage Temperature Range (Tstg) -55 to +150 OC
Unit
Volt
Volt
Amp
Amp
W
C/W
Mechanical Dimensions
DIMENSIONS
Millimetres
Inches
Dim Min Max Min Max
a 10.29 10.54 0.405 0.415
b 2.62 2.87 0.103 0.113
c 6.10 6.47 0.240 0.255
d 3.54 3.78 0.139 0.149
e 14.84 15.24 0.584 0.600
f 13.47 14.09 0.530 0.555
g 1.15
0.045
h 1.15 1.400 0.045 0.055
j 2.54 0.100
k 3.550 4.06 0.140 0.160
m 4.20 4.69 0.165 0.185
n 1.22 1.32 0.048 0.052
p 2.64 2.92
q 0.48 0.55
r 0.69 0.93
0.104
0.018
0.027
0.115
0.022
0.037
a
d
cb
4
eg
k 12 3
h
f
r
Case TO-220-AB
Plastic
j
j
m
n
1 - Gate
2 & 4 - Drain
3 - Source
q
p


IRF630 Datasheet
Recommendation IRF630 Datasheet
Part IRF630
Description Power MOSFET
Feature IRF630; IRF630 Power MOSFET VDSS = 200V, RDS(on) = 0.40 ohm, ID = 9.0 A Drain D Gate Drain Source N Ch.
Manufacture TRANSYS
Datasheet
Download IRF630 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)