Power MOSFET. IRF630 Datasheet

IRF630 MOSFET. Datasheet pdf. Equivalent


nELL IRF630
SEMICONDUCTOR
IRF630 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(9A, 200Volts)
DESCRIPTION
The Nell IRF630 are N-channel enhancement mode
silicon gate power field effect transistors.
They are designed, tested and guaranteed to withstand
level of energy in breakdown avalanche made of operation.
They are designed as an extremely efficient and
reliable device for use in a wide variety of applications
such as switching regulators, convertors, motor drivers
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power.
These transistors can be operated directly from
integrated circuits.
FEATURES
RDS(ON) = 0.40Ω @ VGS = 10V
Ultra low gate charge(43nC max.)
Low reverse transfer capacitance
(CRSS = 80pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
GDS
TO-220AB
(IRF630A)
D
G
D
S
TO-263(D2PAK)
(IRF630H)
D (Drain)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
9
200
0.400 @ VGS = 10V
43
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
VDGR
VGS
ID
IDM
Drain to Source voltage(Note 1)
Drain to Gate voltage
Gate to Source voltage
Continuous Drain Current
Pulsed Drain current (Note 1)
TJ=25°C to 150°C
RGS=20KΩ
VGS=10V, TC=25°C
VGS=10V, TC=100°C
IAR Repetitive avalanche current (Note 1)
EAR Repetitive avalanche energy(Note 1)
EAS Single pulse avalanche energy (Note 2)
IAR=9A, RGS=50Ω, VGS=10V
IAS=9A, L=4.6mH
dv/dt
Peak diode recovery dv/dt(Note 3)
PD Total power dissipation
Derating factor above 25°C
TC=25°C
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.VDD=50V,L=4.6mH,IAS=9A,RG=25Ω,starting TJ=25˚C
3.ISD 9A, di/dt 120A/µs, VDD V(BR)DSS, TJ ≤ 150°C.
www.nellsemi.com
Page 1 of 7
VALUE
200
200
±20
9
5.7
36
9
7.4
250
5
75
0.6
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
mJ
V /ns
W
W /°C
ºC
lbf.in (N.m)


IRF630 Datasheet
Recommendation IRF630 Datasheet
Part IRF630
Description N-Channel Power MOSFET
Feature IRF630; SEMICONDUCTOR IRF630 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (9A, 200Vol.
Manufacture nELL
Datasheet
Download IRF630 Datasheet




nELL IRF630
SEMICONDUCTOR
IRF630 Series RRooHHSS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
Rth(j-c)
Rth(c-s)
Rth(j-a)
PARAMETER
Thermal resistance, junction to case
Thermal resistance, case to heatsink
Thermal resistance, junction to ambient
Min.
Typ.
0.5
Max.
1.7
62.5
UNIT
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
V(BR)DSS
▲ ▲V(BR)DSS/ TJ
IDSS
IGSS
RDS(ON)
VGS(TH)
gfS
CISS
COSS
CRSS
td(ON)
tr
td(OFF)
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
Drain to source leakage current
Gate to source forward leakage current
Gate to source reverse leakage current
Static drain to source on-state resistance
Gate threshold voltage
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
VGS = 0V, ID = 250µA
ID = 1mA, referenced to 25°C
VDS=200V, VGS=0V TC = 25°C
VDS=160V, VGS=0V TC=125°C
VGS = -20V, VDS = 0V
VGS = 20V, VDS = 0V
VGS = 10V, lD = 5.4A (Note 1)
VGS=VDS, ID=250μA
VDS=50V, ID=5.4A
VDS = 25V, VGS = 0V, f =1MHz
VDD = 100V, ID = 5.9A,RG = 12Ω,
VGS = 10V, RD=16Ω (Note 1)
tf
LD
LS
QG
QGS
QGD
Fall time
Internal drain inductance
Internal source inductance
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
Between lead, 6mm from
package and center of die
VDS = 160V, VGS = 10V, ID = 5.9A
Min.
200
2
3.8
Typ.
0.24
0.35
800
240
80
9.5
28
39
20
4.5
7.5
Max. UNIT
V
V/ºC
25
μA
250
100
-100
nA
0.4 Ω
4V
S
pF
ns
nH
43
7 nC
23
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD
Is(ISD)
Diode forward voltage
Continuous source to drain current
ISD = 9A, VGS = 0V
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
2V
9
ISM Pulsed source current
G
(Gate)
36 A
trr Reverse recovery time
Qrr Reverse recovery charge
tON Forward turn-on time
ISD = 5.9A, VGS = 0V,
dIF/dt = 100A/µs
S (Source)
170 350
1.5 2.2
ns
μC
Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%.
www.nellsemi.com
Page 2 of 7



nELL IRF630
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
IRF630 Series RRooHHSS
Nell High Power Products
IRF 630 A
MOSFET series
N-Channel, IR series
Current & Voltage rating, lD & VDS
9A / 200V
Package type
A = TO-220AB
H = TO-263 (D2PAK)
Fig.1 Typical output characteristics,
TC=25°C
101
VGS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
100
10-1
10-1
4.5V
20µs pulse width
TC=25°C
100 101
Drain-to-Source voltage , VDS (volts)
Fig.2 Typical transfer characteristics
101
150°C
25°C
100
10-1
VDS=50V
20µs pulse width
4 5 6 7 8 9 10
Gate-to-Source voltage , VGS (volts)
Fig.3 Typical output characteristics,
TC=150°C
101
VGS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
4.5V
100
10-1
10-1
20µs pulse width
TJ=150°C
100 101
Drain-to-Source voltage , VDS (volts)
Fig.4 Normalized On-Resistance vs. Temperature
3
lD =5.9A
2.5
2
1.5
1
0.5
VGS=10V
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature,TJ (°C)
www.nellsemi.com
Page 3 of 7







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)