isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 400V(Min) ·Static Drain-Source On-Resistance
:...
isc N-Channel MOSFET
Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 400V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.55Ω(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switch mode power supply ·Uninterruptable power supply ·High speed power switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
400
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
10
A
IDM
Drain Current-Single Plused
40
A
Ptot
Total Dissipation@TC=25℃
125
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
62 ℃/W
IRF740
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=0.25mA
VSD
Diode Forward On-voltage
IS= 10A ;VGS= 0
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 6A
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=400V; VGS= 0
IRF740
MIN TYPE MAX UNIT
400
V
2.0
4.0
V
2.0
V
0.55
Ω
±100 nA
25
µA
NOTICE： ISC reserve...
