SEMICONDUCTOR
IRF830 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET (4.5A, 500Volts)
DESCRIPTION
The...
SEMICONDUCTOR
IRF830 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET (4.5A, 500Volts)
DESCRIPTION
The Nell IRF830 are N-Channel enhancement mode silicon gate power field effect
transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as switching
regulators. convertors, UPS, switching mode power supplies and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power. These
transistors can be operated directly from integrated circuits.
FEATURES
RDS(ON) = 1.5Ω @ VGS = 10V
Ultra low gate charge(38nC Max.)
Low reverse transfer capacitance (CRSS = 68pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability 150°C operation temperature
D
GDS
TO-220AB (IRF830A)
D (Drain)
G (Gate)
S (Source)
PRODUCT...