IRFS830

500V/3.1A N-Channel Power MOSFET (Discontinued) IRFS830 SAMSUNG General Description  Low on resistance  Improved inductive ruggedness  Fast switching time  Rugged polysilicon gate cell structure  Lower input capacitance  Extended safe operating area  Improved high temperature reliability TO-220F Features  VDSS=500V, ID=3.1A  RDS(ON) ≤ 1.5 Ω @ VGS=10V Pin Configuration 1: Gate 2: Drain 3: Source TO-220F TAITRON INTERNET SUPER STORE (TISS) www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. A/PQ Page 1 of 10 IRFS830 SAMSUNG Absolute Maximum Ratings Symbol Description IRFS830 VDSS VDGR VGS ID ID IDM IGM EAS IAS Drain-Source Voltage (1) Drain-Gate Voltage (RGS =1.0MΩ) (1) Gate-Source Voltage Drain Current –Continuous Tc=25°C Drain Current –Continuous Tc=100°C Drain Current - Pulsed (2) Gate Current - Pulsed Single Pulsed Avalanche Energy (3) Avalanche Current 500...