Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@...
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
DESIGNER’S DATA SHEET
.170 .011
2SPT6341SD
MultiEpitaxial Planar
NPN Power
Transistor Die
E
.180
B
Features: Recommended replacement for the 2N6338 – 6341 series Die Size: 170 x 180 Mils Die Thickness: 260 – 330 µm Bonding Area:
Emitter: 30 x 60 Mils Base: 40 x 50 Mils Maximum Recommended Wire Bonding: Emitter: Al (15 Mils Dia) Base: Al (15 Mils Dia) Metallization: Top: 60,000Å Al Bottom: 5,500Å Au / Cr / Ni / Au
Maximum Ratings 4/
Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Continuous Collector Current Peak Collector Current
Continuous Base Current Power Dissipation @ TC = 25ºC Derate above 25ºC
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
Symbol
VCEO VCBO VEBO
IC IC max
IB
PD
Top & Tstg RθJC
Value
125
180 6 25 50 10 200 ...
