Document
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341
DESCRIPTION ·With TO-3 package ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6436~38
APPLICATIONS ·For use in industrial-military power amplifier
and switching circuit applications
PINNING(see Fig.2) PIN
DESCRIPTION
1 Base
2 Emitter
3 Collector
F Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6338
VCBO
Collector-base voltage
2N6339 2N6340
2N6341
2N6338
VCEO
2N6339 Collector-emitter voltage
2N6340
2N6341
VEBO IC ICM
Emitter-base voltage Collector current Collector current-peak
IBC Base current
PD Total power dissipation Tj Junction temperature Tstg Storage temperature
CONDITIONS Open emitter
Open base Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE 120 140 160 180 100 120 140 150 6 25 50 10 200 200
-65~200
UN.