BRM501D

BRM501D Rev.D Nov.-2015 DATA SHEET / Descriptions SOT-23 N MOS 。N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features ESD ，（VGS(th)-1.8V）。 ESD Improved capability, Depletion mode(VGS(th)=-1.8V,type). / Applications 。 This device is suitable for load switch of high voltage. / Equivalent Circuit / Pinning 3 2 1 PIN1：S PIN 2：G PIN 3：D / Marking Marking H501 http://www.fsbrec.com 1/7 BRM501D Rev.D Nov.-2015 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Drain-Source Voltage Drain Current - Continuous Drain Current - Continuous Drain Current- Pulsed Continuous Source Current Maximum Pulsed Current Gate-to-Source Voltage Gate source ESD Power Dissipation Junction-to-Ambient Junction Temperature Range Storage Temperature Range Temperature for Soldering Symbol VDS ID...